Polyimide stud transfer process.

摘要

A method for forming via openings through a non-polymeric insulating layer (12) down to an underlying semiconductor device (10), when the insulating layer has no etch selectivity relative to the semiconductor device material. The method comprises the steps of forming a plurality of free-standing polymer studs (20) at selected locations on a semiconductor wafer; depositing the non-polymeric insulating layer (12) on to the semiconductor wafer and around the polymeric studs; and selectively removing only the polymeric studs (20) to leave the desired via holes (14). A preferred metallization system (32, 34) that could be deposited includes a first barrier metal layer (32) which covers the bottom and at least a portion of the sidewalls of the via holes to thereby form a cup. A second metal layer (34) of a metal such as aluminum, could then be deposited in the barrier metal cup.