ALUMINIUM DIFFUSION METHOD FOR SEMICONDUCTORS

摘要

Diffusion of aluminium into a silicon semiconductor wafer from an annular or grid pattern of depositied metallic aluminium to form a p-type annular zone at least 75 microns deep. The diffusion is performed in an oxidizing atmosphere to inhibit aluminium contamination of the wager portion bounded by the p-type annular zone and in which for instance a thyristor may subsequently be formed. The aluminium may be diffused through the whole thickness of the wager to form a peripheral zone of the thyristor body. Figure 3 is suitable for publication.