发明名称 LIMINOUS SEMICONDUCTOR DEVICE
摘要 PURPOSE:To make modulation with a fine signal power possible by providing an amplification function to the device itself, by forming a transistor at some part of the crystal layer of a compound semiconductor which constituted a semiconductor laser.
申请公布号 JPS5414692(A) 申请公布日期 1979.02.03
申请号 JP19770080788 申请日期 1977.07.05
申请人 FUJITSU LTD 发明人 FUJIWARA TAKAO
分类号 H01L27/15;H01S5/00;H01S5/026 主分类号 H01L27/15
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