| 摘要 |
<p>In a semiconductor optical device, lead silicate glass coatings 4 are provided on reflective surfaces of the device to protect the device and to adjust the surface reflectivity. The coatings can be deposited by controlled sputtering from a preformed glass body having properties compatible with those of the device. The device may be a LED, a laser or a light detector comprising GaAs, GaAlAs, GaP, GaAsP, GaInAsP, or GaAsSb. The molar ratio between PbO and SiO2 in the lead silicate glass is between 20:80 and 70:30. <IMAGE></p> |
