Thyristor with gate electrode by anode electrode - has auxiliary region of large lateral resistance in surface layer between the two

摘要

A thyristor with a gate electrode formed on the side of an anode electrode. An auxiliary region of a large lateral resistance is formed in a surface layer of the substrate between the anode and gate electrodes. A bilateral three-terminal thyristor structure may have two equivalent thyristors formed in a single semiconductor substrate and connected in parallel and in opposite polarities to each other. The anode gate thyristor, which can be turned on with small control signal current, may be turned on irrespective of the polarity of the control signal voltage. The control signal voltage may be increased so as to prevent it from being erroneously turned on due to noise voltage from a gate circuit.