| 摘要 |
By injecting the same conduction type impurity as arsenic which has larger diffusion coefficient than that of arsenic of a lower part of storage capacitor into a lower part of mini-field to be formed, the oxide film of a first polysilicon layer is not only well connected with a source area by inpurity side diffusion, but also power supply margin of DRAM and refreshment time can be increased. And etching edges of field oxide film enables the storage capacitor to magnify its capacity.
|
