发明名称 |
HIGH-SPEED RANDOM ACCESS MEMORY |
摘要 |
<p>HIGH-SPEED RANDOM ACCESS MEMORY A bipolar RAM has increased speed through use of nonsaturating voltages and improved read/write capabilities provided by memory cell and isolation circuit which functions as a sense amplifier. An output buffer including constant current means provides an output responsive to the signal from the memory cells taken through the isolation circuitry.</p> |
申请公布号 |
CA1047645(A) |
申请公布日期 |
1979.01.30 |
申请号 |
CA19750234504 |
申请日期 |
1975.09.02 |
申请人 |
HONEYWELL INFORMATION SYSTEMS INC. |
发明人 |
FETT, DARRELL L. |
分类号 |
G11C11/41;G11C11/411;G11C11/414;H03K3/286;(IPC1-7):11C11/34 |
主分类号 |
G11C11/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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