| 摘要 |
PURPOSE:To make an insulative heat dissipating substrate applicable also to a semiconductor device of large current capacity by bonding a metal frame provided with a semiconductor mounting part whose shape is compatible to a conductor pattern on the insulative heat dissipating substrate. CONSTITUTION:A metal frame 2 having main electrode terminals 2b and semiconductor mounting parts 2a connecting with said terminals is fixed on a main current circuit wiring pattern part. A semiconductor element on the mounting part 2a connecting with one main electrode terminal is connected with the metal frame 2 connecting with the other main electrode terminal and a control circuit wiring pattern part 3, by using conductor leads. Hence current of the semiconductor device is led cut to the outside through the metal frame 2, so that the thickness of the metal frame 2 may be determined in response to the current capacity of a semiconductor device. Thereby the insulative heat dissipating substrate 1 is suitably applicable to a semiconductor device of large current capacity, and miniaturization of a semiconductor device is enabled. |
