IMPLANTATIONSVERFAHREN

摘要

The implantation process is intended for semiconductors of material with a high vapour pressure, such as gallium arsenide. The implantation is followed by regenerative tempering step, during which the semiconductor surface is coated by a covering film. This film is of different material than the semiconductor material but of identical lattice structure. During implantation charge carriers are used. The coating film is preferably gallium arsenide, possibly p-conductive. The film may be 0.2-1 micron thick and have an impurity concentration of several 1016 atoms/cm3. After the tempering process the film may be removed, or left on the surface and used as a zone of a semiconductor component to be produced.