发明名称 MUTUAL COMPLEMENT TYPE INSULATION GATE TYPE ELECTRIC FIELD EFFECT TRANSISTOR CIRCUIT
摘要 <p>PURPOSE:To reduce power consumption of circuit and make it possible to operate with a small battery by effectively using power supply voltage by providing a low electric potential side power supply line and high electric potential side power line for each circuit consisting of plural number of CMOSFET.</p>
申请公布号 JPS549544(A) 申请公布日期 1979.01.24
申请号 JP19770074513 申请日期 1977.06.24
申请人 CITIZEN WATCH CO LTD 发明人 EBIHARA HEIHACHIROU;SEKIYA FUKUO
分类号 H03K19/00;G04G19/00;H03K3/012;H03K3/353;H03K5/003;H03K19/094;H03K19/0948 主分类号 H03K19/00
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