发明名称 |
Process of making platinum silicide fuse links for integrated circuit devices |
摘要 |
Selected circuit elements and interconnections of an integrated circuit device are connected by platinum silicide fuse links which open when electrical power exceeds a threshold amount. The fuse is constructed by defining the fuse geometry in a polycrystalline silicon layer over a wafer substrate, depositing a layer of platinum thereover and then sintering the platinum into the polysilicon.
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申请公布号 |
US4135295(A) |
申请公布日期 |
1979.01.23 |
申请号 |
US19770807806 |
申请日期 |
1977.06.20 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PRICE, WILLIAM L. |
分类号 |
H01L23/525;H01L23/62;(IPC1-7):H01H69/02 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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