| 发明名称 |
EPITAXIAL GROWTH OF DISSIMILAR MATERIALS |
| 摘要 |
A device includes a layer (12) of one material epitaxially grown on another material (11). The materials have lattice constants which are in the ratio of an integer other than unity. For example one material (12) may be a semiconductor and the other a garnet (11). Thus magneto-optic (15) and electro-optic (13) devices can be combined on the same substrate to form integrated-optics devices.
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| 申请公布号 |
US4136350(A) |
申请公布日期 |
1979.01.23 |
| 申请号 |
US19770815720 |
申请日期 |
1977.07.14 |
| 申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
TIEN, PING K. |
| 分类号 |
H01L33/00;G02F1/095;H01L21/20;H01L21/205;H01L21/86;H01L27/12;H01L27/15;H01L29/04;H01L43/04;H01S5/00;(IPC1-7):H01L29/16 |
主分类号 |
H01L33/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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