发明名称 WORKING METHOD FOR WAFER
摘要 PURPOSE:To adequately omit the stage of lapping, etching, etc., and to improve the yield of the resist coating/exposure stages performed in succession after a wafer working stage by shaping the surface of a wafer by grinding in a recessed face or projecting face with good controllability. CONSTITUTION:Two circular surface plates 2, 3 driven by rotating independently each other are arranged in opposition up and down by sliding so that the upper surface plate 4 coincides with the shaft center of the rotary shaft 5 of the lower surface plate 3, the shaft center of the rotary shaft 5 of the lower surface plate 3 is pivotally supported vertically, the shaft center of the rotary shaft 8 of the upper surface plate 2 is pivotally supported by inclining to the shaft center of the rotary shaft 5 of the lower surface plate 3 in the surface including the rotary shafts 5, 8 of the two surface plates 2, 3 and a grindstone 7 is fixed to the upper surface plate 2. Moreover, a wafer 6 is vacuum adsorbed to the lower surface plate 3, two surface plates 2, 3 are rotated in the opposite direction each other, and yet, at least one part of the surface plates is press-fitted to the other part of the surface plate with moving in the vertical direction and the surface of the wafer 6 is shaped by grinding the recessed face or projecting face with good controllability.
申请公布号 JPH02139163(A) 申请公布日期 1990.05.29
申请号 JP19880292575 申请日期 1988.11.18
申请人 FUJITSU LTD 发明人 KISHII SADAHIRO
分类号 B24B7/04;B24B7/22;B24B37/02;H01L21/304 主分类号 B24B7/04
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