| 摘要 |
PURPOSE:To manufacture an exposure mask with high precision causing no distortion at all even if the mask is exposed to high temperature during the later base layer formation process by a method wherein carbide layers are formed between a silicon substrate and metallic patterns. CONSTITUTION:A silicon oxide film 21 is deposited on the surface of a silicon substrate 20 to be coated with an electron beam resist film 22a. Then, the film 22a is irradiated with the electron beams, etc., after specific patterns to be developed for the formation of resist film patterns. The film 21 and the substrate 20 are etched away using the patterns as masks to cut grooves 23 in the substrate 20. Next, the patterns 22 are removed to form a carbide layer 24 in specified thickness on the surface of the film 21 and the substrate 20 in the grooves 23. Then, a heavy metal in high X-ray absorptivity is deposited on the surface of the film 21 which is removed with the heavy metal left only in the grooves 23. Next, another carbide film 26 is provided on the exposed surface of metallic patterns 25 while the other carbide layer 24a is formed on the exposed surface of the substrate 20. Through these procedures, the distortion or positional slip of the metallic patterns can be prevented from occurring. |
