摘要 |
Structures of amorphous materials constituted by a plurality of thin layers of variable composition are prepared by means of a process using a glow discharge in one single reactor and without the mixture of the reactant gases being varied during the deposition by changing the voltage during the course of the deposition so as to induce dissociation of the gases and deposit successive layers comprising silicon, carbon, oxygen, nitrogen, germanium and/or hydrogen. The preparation is disclosed of multilayer structures, which can be used in photovoltaic devices and in electronics. |