发明名称 |
High capacity thin film capacitor structure - comprising two electrodes and an insulating layer, with a layer of charge-trapping materials |
摘要 |
<p>One electrode is a substrate and the insulating region is an oxide on the substrate. The interface between the substrate and the insulator presenting irregularities tends to produce locally high electric fields, which are counteracted by the charge-trapping region, situated close to the interface. Improved breakdown voltages are thus obtained.</p> |
申请公布号 |
FR2395606(A1) |
申请公布日期 |
1979.01.19 |
申请号 |
FR19780004188 |
申请日期 |
1978.02.08 |
申请人 |
IBM |
发明人 |
DONELLI J. DIMARIA ET DONALD R. YOUG;YOUG DONALD R |
分类号 |
H01L21/3115;H01L29/51;H01L29/792;(IPC1-7):01L29/94 |
主分类号 |
H01L21/3115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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