CMOS FLIP FLOP MEMORY ELEMENT WITHOUT CROSSOVER, AND METHOD OF OPERATION

摘要

A static semiconductor storage element includes a flip-flop formed of a pair of complementary field effect transistors which are cross coupled without intersection to form a bistable circuit. One node of the flip-flop is connected to a terminal which is employed for both reading and writing functions. The flip-flop is set or reset by connection of an appropriate voltage to the node, and nondestructive read out is carried out by sensing the voltage level of the node.