POLYCRYSTALLINE SILICON BASED SURFACE PASSIVATION FILMS

摘要

This is a semiconductor device having a plurality of insulating layers. A first insulating layer arranged on the surface of the semiconductor is a polycrystalline silicon layer containing oxygen. And a second insulating layer which is selected from the group consisting of polycrystalline silicon layer containing nitrogen, Si3N4 layer, Al2O3 layer and silicone resin layer is deposited on the first insulating layer. The second insulating layer has better water-proof characteristic than a SiO2 layer.