MANUFACTURE OF INFRARED DETECTOR

摘要

PURPOSE:To manufacture an infrared detector in which resistance values of detector elements are uniform and whose accuracy is high by a method wherein an upper electrode is worked and the opposite area between the upper electrode and a lower electrode is changed to a direction in which an irregularity between the detection parts is eliminated. CONSTITUTION:An insulating film 12 which is composed of silicon nitride or the like is formed on one face of a silicon substrate 11, and a thin film which is composed of silicon nitride is formed on its opposite face. A chromium layer is etched on the film 12, a lower electrode 15 is formed, an amorphous silicon layer is etched on it, and a thin-film resistor 14 is formed. In addition, an upper electrode 15 is formed of chromium on the resistor 14. Then, a silicon oxide layer is etched on the resistor 14 and the electrode 15, an infrared absorption layer 17 is formed, an aluminum layer is etched on the electrode 15, and electrode terminals 16 are formed. At this time, in a detector in which an irregularity in resistance values of four elements (a) which form a bridge circuit is at + or -2% or higher after the resistance values of the detector elements (a) have been measured, a part of the upper electrode film is cut by a laser, the opposite area between the upper and lower electrodes is adjusted, the irregularity is eliminated, and the respective resistance values are made uniform.