| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE |
| 摘要 |
PURPOSE:To establish bipolar IC having junction type FET high in input impedance and less in noise, by adding a few processes to conventional bipolar IC manufacturing technology. |
| 申请公布号 |
JPS544085(A) |
申请公布日期 |
1979.01.12 |
| 申请号 |
JP19770068924 |
申请日期 |
1977.06.13 |
| 申请人 |
HITACHI LTD |
发明人 |
NIINO KAORU |
| 分类号 |
H01L29/80;H01L21/337;H01L21/761;H01L21/8222;H01L21/8248;H01L27/06;H01L29/808 |
主分类号 |
H01L29/80 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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