| 发明名称 |
GROWING METHOD OF SILICON CRYSTAL UNDER LOW PRESSURE |
| 摘要 |
PURPOSE:To grow a lot of silicon thin film on the substrate under a low pressure, by placing the major plane of the substrate orthogonally and in parallel with gas flow, and by surrounding the circumference with silicon of which cross section is approximately a square or with a quartz tube. |
| 申请公布号 |
JPS544066(A) |
申请公布日期 |
1979.01.12 |
| 申请号 |
JP19770068918 |
申请日期 |
1977.06.13 |
| 申请人 |
HITACHI LTD |
发明人 |
KOGIRIMA MASAHIKO;SAIDA HIROJI;TAKAHASHI RIYOUKICHI;KAWAMURA MASAO;MAKI MICHIYOSHI |
| 分类号 |
C23C16/24;C30B25/02;C30B25/12;C30B29/06;H01L21/205 |
主分类号 |
C23C16/24 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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