发明名称 Microwave plasma processing system
摘要 <p>A microwave plasma processing system has heating means for heating the wall of a reaction chamber, and an adhesion preventing member in which a cylinder disposed so as to be in contact with the inner face of a wall of the reaction chamber and a microwave reflecting plate having a gas discharge hole are integrally formed. A microwave plasma processing system has heating means for heating the wall of a reaction chamber, and a microwave reflecting plate which is attached to the inner face of a wall of the reaction chamber and which has a gas discharge hole. <IMAGE></p>
申请公布号 EP0688037(A1) 申请公布日期 1995.12.20
申请号 EP19950109089 申请日期 1995.06.13
申请人 SUMITOMO METAL INDUSTRIES, LTD.;NEC CORPORATION 发明人 KATAYAMA, KATSUO, C/O SUMITOMO METAL IND., LTD.;KOMACHI, KYOICHI, C/O SUMITOMO METAL IND., LTD.;MABUCHI, HIROSHI, C/O SUMITOMO METAL IND., LTD.;AKIMOTO, TAKESHI, C/O NEC CORPORATION
分类号 H05H1/46;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):H01J37/32 主分类号 H05H1/46
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