发明名称 READ TIMING METHOD OF NONVOLATILE MEMORY AND CIRCUIT
摘要 <p>PURPOSE: To derive optimum performance from a memory by enabling the circuit with a switching edge, making the circuit programmable, and protecting the circuit against noise. CONSTITUTION: A delay unit 23 inputs a low-level signal, which goes up to a high level a delay time corresponding to the contents of memory elements 20 and 22 after a leading edge of a signal ATD is received, to a NOR gate 27. The gate 27 inputs a signal PC as a signal DET to an asymmetrical delay unit 24 through a NOR gate 28, and a low-level data simulation signal SP is outputted which goes up to the high level a delay time based upon the elements 20 and 21 after a leading edge of the signal DET is received. The signal SP is transferred to an output similar circuit 33 and at its completion time, a high level is outputted. Consequently, signals N and L are switched to the low level and the output STP of a continuance expanding circuit 51 goes down to a low level. Consequently, the data loading is completed. This loading lasts accurately in an output circuit 108 during data propagation.</p>
申请公布号 JPH0855485(A) 申请公布日期 1996.02.27
申请号 JP19950047962 申请日期 1995.02.14
申请人 SGS THOMSON MICROELETTRONICA SPA 发明人 RUIIJI PASUKATSUCHI;SHIRUBIA PADOAN;KAARA MARIA GORA;MARUKO MATSUKAROONE;MARUKO ORIBUO
分类号 G11C17/00;G11C7/02;G11C7/10;G11C7/22;G11C16/02;G11C16/32;(IPC1-7):G11C16/06 主分类号 G11C17/00
代理机构 代理人
主权项
地址