| 摘要 |
PURPOSE:To drastically decrease the amt. of the particles to be generated and to improve the yield of products by subjecting the surface layer of a sputtering target to an etching treatment and sputtering the treated surface, thereby forming a thin film. CONSTITUTION:The thin film for production of semiconductor devices is formed by sputtering the target consisting of a high melting metal, such as Ti, Mo, W, or Ta alone or the silicon mosaic thereof or silicide thereof, etc. The surface layer of at least the surface to be sputtered of the above-mentioned sputtering target is previously subjected to the etching treatment. Wet etching is preferably used in terms of fastness and the ease of operations for this etching treatment. The work defects, residual stresses, etc., of the above-mentioned surface layer are effectively removed by this treatment. The amt. of the particles generated during sputtering, more particularly the initial period of sputtering is drastically decreased in this way. |
