| 摘要 |
Disclosed is a method of forming patterned electron beam resists from polymers that undergo energy intensity or electron dosage dependent reactions. Upon the introduction of sufficient energy, the polymer generates two reactive species that react with each other. However, with a lower amount of energy, the polymer generates only one reactive species. A thin film of the dosage dependent polymer is applied to a support and is subjected to a programmed electron beam scan. The electron beam irradiates a portion of the polymer film according to the programmed pattern and furnishes enough energy in the path of the beam to cause the polymer to cross link where directly irradiated, thus causing the polymer to become insoluble in certain solvents. The portion of the polymer adjacent the directly irradiated portion is subjected to electrons back-scattering from the surface of the support, which electrons are a small percentage of the total beamed at the polymer. This adjacent portion of the polymer does not receive sufficient energy from the back-scattered electrons to effect much degree of cross linking in some cases, and in other cases the polymer may actually degrade. The back-scattered portion of the polymer along with the unirradiated portion of the polymer remains soluble in certain solvents and is removed resulting in the desired pattern of openings.
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