发明名称 |
Hyperfrequency device with gunn effect |
摘要 |
In a Gunn effect device the cathode contact is formed by an assembly of zones through which is effected the injection of current adjoining an assembly of zones which on the contrary are capable of blocking this injection. A layer of dielectric material possibly insulates these two types of zones. A metallic control electrode assures the arrival of the current. The respective dimensions of these zones are determined in such manner that, in operation, the injected current is channeled between parts of the device made dielectric by the creation of space charges.
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申请公布号 |
US4134122(A) |
申请公布日期 |
1979.01.09 |
申请号 |
US19780872554 |
申请日期 |
1978.01.26 |
申请人 |
THOMSON-CSF |
发明人 |
MOUTOU, PAUL C.;GODART, JEAN-JACQUES |
分类号 |
H01L47/02;(IPC1-7):H01L47/02 |
主分类号 |
H01L47/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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