发明名称 |
Selective enhancement of phosphorus diffusion by implanting halogen ions |
摘要 |
An improved method of making bipolar monolithic integrated circuits by successive diffusions of boron and phosphorus. Selective halogen ion implantation is used to locally specifically enhance phosphorus diffusion. The halogen implant is performed prior to the boron diffusion. Enhanced local phosphorus diffusion provides selected transistors in the circuit with a narrower base width than others, and a corresponding higher current gain than others. Analogously, higher value pinch resistors can be selectively produced in the circuit.
|
申请公布号 |
US4133701(A) |
申请公布日期 |
1979.01.09 |
申请号 |
US19770810929 |
申请日期 |
1977.06.29 |
申请人 |
GENERAL MOTORS CORPORATION |
发明人 |
GREENSTEIN, EUGENE;MACIVER, BERNARD A. |
分类号 |
H01L21/225;H01L21/265;H01L29/167;(IPC1-7):H01L21/26;H01L27/02 |
主分类号 |
H01L21/225 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|