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发明名称
HIGHHCONCENTRATION NNTYPE LAYER FORMATION METHOD INTO GALLIUM ARSENIDE
摘要
PURPOSE:To form the n<+>-layer into GaAs through the ion injection by piling Si and the element selected among S, Se and Te.
申请公布号
JPS54863(A)
申请公布日期
1979.01.06
申请号
JP19770065957
申请日期
1977.06.03
申请人
NIPPON ELECTRIC CO
发明人
OKABAYASHI HIDEKAZU
分类号
H01L21/265
主分类号
H01L21/265
代理机构
代理人
主权项
地址
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