| 摘要 |
Compact, low-capacitance output circuit for charge coupled device (CCD). The circuit includes a semiconductor electrode which is doped at opposite edges thereof to form the source and drain regions, respectively, of a thin film transistor. The conduction channel of the transistor is the region of the semiconductor electrode between the source and drain regions. The gate electrode of the transistor is the region of the substrate adjacent to the conduction channel and the input signals comprise the packets of charge shifted to this substrate region by the multiple phase voltages which operate the CCD.
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