发明名称 |
N-CONDUCTIVITY SILICON MONO-CRYSTALS PRODUCED BY NEUTRON IRRADIATION |
摘要 |
<p>A method for producing homogeneously doped silicon monocrystals, with n-conductivity, by neutron irradiation, wherein, after zone-melting in a vacuum and conversion of the polycrystalline rod into the monocrystalline form, the remaining conductivity of the rod is determined , the said rod being then exposed to controlled irradiation with thermal neutrons, based on the conductivity measurement carried out, for the purpose of obtaining the desired n-conductivity.</p> |
申请公布号 |
CA1045523(A) |
申请公布日期 |
1979.01.02 |
申请号 |
CA19740213350 |
申请日期 |
1974.11.08 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
HAAS, ERNST;MARTIN, JOACHIM;REUSCHEL, KONRAD;SCHNOELLER, MANFRED |
分类号 |
C30B13/10;C30B13/00;C30B29/06;C30B31/20;C30B31/22;H01L21/261;(IPC1-7):01J17/40 |
主分类号 |
C30B13/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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