发明名称 N-CONDUCTIVITY SILICON MONO-CRYSTALS PRODUCED BY NEUTRON IRRADIATION
摘要 <p>A method for producing homogeneously doped silicon monocrystals, with n-conductivity, by neutron irradiation, wherein, after zone-melting in a vacuum and conversion of the polycrystalline rod into the monocrystalline form, the remaining conductivity of the rod is determined , the said rod being then exposed to controlled irradiation with thermal neutrons, based on the conductivity measurement carried out, for the purpose of obtaining the desired n-conductivity.</p>
申请公布号 CA1045523(A) 申请公布日期 1979.01.02
申请号 CA19740213350 申请日期 1974.11.08
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 HAAS, ERNST;MARTIN, JOACHIM;REUSCHEL, KONRAD;SCHNOELLER, MANFRED
分类号 C30B13/10;C30B13/00;C30B29/06;C30B31/20;C30B31/22;H01L21/261;(IPC1-7):01J17/40 主分类号 C30B13/10
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