发明名称
摘要 A method for producing a SiO2 glass material having regions changed in light refractive index is provided which comprises implanting at least 5x1019 Ge ions/cm3 into a SiO2 glass substrate, heat-treating the substrate at a temperature exceeding 300 DEG C., and exposing the substrate to an ultraviolet light. Also provided is a SiO2 glass material produced by the method.
申请公布号 JP2832340(B2) 申请公布日期 1998.12.09
申请号 JP19960025754 申请日期 1996.01.19
申请人 KOGYO GIJUTSU INCHO 发明人 NISHII JUNJI;FUKUMI KOHEI;CHAYAHARA AKYOSHI;FUJII KANESHIGE;YAMANAKA YUTAKA
分类号 G02B1/00;C03C3/06;C03C4/04;C03C21/00;C03C23/00;G02B6/12;G02B6/13;G02B6/134 主分类号 G02B1/00
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