| 摘要 |
PURPOSE:To secure a sufficient capacitance regardless of reduction in occupied area of memory cell by making a second storage node electrode thin to an extent that a second capacitor electrode formed on the upper layer through the capacitor insulation film is embedded into the storage node contact. CONSTITUTION:In a semiconductor storage device in lamination-type capacitor structure where the capacitor is laminated through a storage contact 12 opened at insulation films 6, 8, and 11 covering the surface of a substrate forming a MOSFET, a first capacitor electrode consists of first and second storage node electrodes 13 and 20, the first storage node electrode 13 is formed on the insulation film 11, the second storage node electrode 20 is formed within the above storage node contact 12, a second capacitor electrode 15 which is formed at the upper layer through a capacitor insulation film 14 is formed thinly so that it can be embedded into the storage node contact 12, and it is formed on the upper-layer side from a bit line 10. |
