| 发明名称 |
SEMICONDUCTOR INTEGRATEDDCIRCUIT DEVICE AND ITS MANUFACTURE |
| 摘要 |
PURPOSE:To obtain a low-noise JFET, by reducing drain-gate leak with a source-drain layer made adjacent to a gate connection layer, by forming a n channel by injecting As sm all in diffusion factor in early process, and by annealing generated crystal defective completely. |
| 申请公布号 |
JPS53149773(A) |
申请公布日期 |
1978.12.27 |
| 申请号 |
JP19770065024 |
申请日期 |
1977.06.01 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
YONEDA TADANAKA |
| 分类号 |
H01L29/80;H01L21/331;H01L21/337;H01L21/8222;H01L21/8248;H01L27/06;H01L29/73;H01L29/808 |
主分类号 |
H01L29/80 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
