| 发明名称 |
MANUFACTURE OF INTEGRATEDDCIRCUIT DEVICE |
| 摘要 |
PURPOSE:To fabricate a charge-coupled RAM which will not malfunction, by generating oxidized films thin at a memory part and gate part and thick at a sensor part simultaneously. |
| 申请公布号 |
JPS53149775(A) |
申请公布日期 |
1978.12.27 |
| 申请号 |
JP19770065137 |
申请日期 |
1977.06.01 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
NISHIMOTO AKIRA;TSUBOUCHI NATSUO;MIYAKE KUNIAKI;MIYOSHI HIROKAZU;NAGASAWA KOUICHI |
| 分类号 |
H01L27/10;H01L21/316;H01L21/8242;H01L27/108 |
主分类号 |
H01L27/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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