| 摘要 |
An improved short-channel complementary MOS transistor structure is provided. The problems of low punch-through voltage breakdown, and "short-channel effects" are particularly addressed and solved. Accurate and precise field protection of all area surrounding the channel, source and drain regions of both the p-channel MOS transistor device and the n-channel transistor device is simply and effectively accomplished. The threshold voltage of the n-channel MOS transistor device is precisely controlled by a boron implantation.
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