| 摘要 |
PURPOSE:To prevent diffusion of impurities, and form a highly reliable semiconductor device having an insulating film of low interfacial level wherein fixed charges and unpaired bonding hands do not exist, by containing phosphorus in a gate insulating film of an insulated gate type semiconductor device. CONSTITUTION:Phosphorus of 1X10<19>-5X10<20>cm<-3> or preferably of 1X10<20>-3X10<20>cm<-3> is contained in a gate insulating film, e.g. a silicon oxide film, thereby forming so-called phosphosilicate glass. As the result, impurities like hydrogen ions and sodium ions being impurities are subjected to gettering (captured) on account of existance of phosphorus, so that these impurity ions are prevented from diffusing, and the generation of fixed charges is restrained. Hence a gate insulating film of low interfacial level which is excellent in electric stability can be obtained, and the reliability of a semiconductor device is improved. |
