发明名称 SEMICONDUCTOR DEVICE HAVING AN ANTIREFLECTIVE COATING
摘要 <p>A polycrystalline silicon layer provides an antireflective coating on a semiconductor surface of a photo-sensitive detector, the polycrystalline silicon layer containing from 25 to 45 atomic percent of oxygen and having a refractive index intermediate that of the semiconductor crystal and the exterior environment.</p>
申请公布号 CA1045235(A) 申请公布日期 1978.12.26
申请号 CA19750236812 申请日期 1975.10.01
申请人 SONY CORPORATION 发明人 MAMINE, TAKAYOSHI;MATSUSHITA, TAKESHI
分类号 G02B1/11;H01L21/314;H01L31/02;H01L31/0216;H01L31/04;H01L31/10;(IPC1-7):01L27/14 主分类号 G02B1/11
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