| 摘要 |
The invention relates to a surface treatment for a carbon surface. A carbon-rich silicon carbide layer is applied over the carbon surface. The ratio of silicon to carbon in the carbon-rich layer varies from zero at the carbon surface interface to greater than zero and preferably 0.3 to 0.5 on the surface of the carbon-rich layer remote from the interface. A preferred method of making the silicon carbide layer is also presented. |
