| 发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
PURPOSE:To improve the density of a monolithic integrated-circuit memory device array element, by realizing a simply-structured memory device which contains a memory block connected in common to the drains of memory transistors Tr via a current limiting IGFET. |
| 申请公布号 |
JPS53148256(A) |
申请公布日期 |
1978.12.23 |
| 申请号 |
JP19770063506 |
申请日期 |
1977.05.30 |
| 申请人 |
NIPPON ELECTRIC CO |
发明人 |
KUROKI YUKINORI;SUGIBUCHI KIYOSHI |
| 分类号 |
G11C17/00;G11C11/34;G11C16/04;G11C27/00;H01L21/8246;H01L21/8247;H01L27/04;H01L27/112;H01L29/788;H01L29/792 |
主分类号 |
G11C17/00 |
| 代理机构 |
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代理人 |
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