| 发明名称 |
PRODUCTION OF PLANAR TYPE THYRISTOR |
| 摘要 |
PURPOSE:To make forward forward dielectric strength as high as reverse dielectric strength by providing graft base regions of opposite conductivity type deeper than gate layers on the circumferential edge parts of th gate layers. |
| 申请公布号 |
JPS53147478(A) |
申请公布日期 |
1978.12.22 |
| 申请号 |
JP19770062508 |
申请日期 |
1977.05.28 |
| 申请人 |
NIPPON ELECTRIC CO |
发明人 |
ISHIKURA OSAMU |
| 分类号 |
H01L29/73;H01L21/331;H01L29/10;H01L29/74 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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