| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
| 摘要 |
PURPOSE:To obtain voltage-current characteristics showing linearity even when an applied voltage is low by seriesor parallel-connecting two depletion type MOS transistors thereby forming a high resistance elment. |
| 申请公布号 |
JPS53147486(A) |
申请公布日期 |
1978.12.22 |
| 申请号 |
JP19770062333 |
申请日期 |
1977.05.27 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
MUNAKATA KOUNIN |
| 分类号 |
H01L27/04;H01L21/822;H01L27/088 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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