Semiconductor device with mono or multilayered conductor network - using opt. modified polyimide or polyamide auxiliary layer on active surface

摘要

A process is claimed for producing a semiconductor device on a plate comprising an active surface covered with a protective lining of a dielectric material. The lining has an opening in which a semiconductive material is flush and the active surface has an array of conductors joined to the semiconductor. The process comprises (1) providing an auxiliary layer on the active surface, the layer having a recess with the shape of the array of conductors, and covering the opening and the plies of the lining, (2) depositing on the active surface a conductive film parts of which cover the auxiliary layer and other parts of which cover the recess, and (3) eliminating, by selective etching, the auxiliary layer and, with it, the parts of the conductive film located on the auxiliary layer to thus leave the parts in the recess and comprising the array of conductors. The known process is now improved by (a) using an auxiliary layer a polyimide, polyamide-imide, amide-modified polyimide, polyamide acids or polyamino-imides, (b) heating the auxiliary layer, (c), depositing on the auxiliary layer a film in which a mask is formed through which the recess is engraved, (d) removing the mask and (e) depositing the conductive film hot. The auxiliary layer can support temps. of up to 400 degrees C and, in some cases, up to 600 degrees without degradation thus allowing thermal processes to be effected in their presence. It can be deposited in layers of constant thickness adhering to the substrate, thus allowing engraving.