| 摘要 |
A method of fabricating an X-ray mask including forming a membrane layer on a wafer and forming a layer of X-ray absorbing material on the membrane layer. A pattern is defined on the absorbing layer with positions that are predistorted in accordance with the following equations, and their extensions if desired: DELTA Y=MyY+ delta Y DELTA X=MxX+ delta X where: My and Mx are the X and Y magnification errors; delta Y includes the terms alpha X4+ beta X2+ gamma where, alpha includes the terms a1Y3+a2Y beta includes the terms a3Y3+a4Y gamma includes the terms a5Y3+a6Y; and with corresponding equations for delta X. The pattern is then formed in the absorbing layer to form an X-ray mask.
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