发明名称 Fine grid structure prodn. - using photolithographic process to expose photosensitive layer twice to form two crossing sets of wires
摘要 <p>The prodn. method is for fine grid structures. The grid has two crossing sets of wires. A negative of the structure is produced photolithographically on a photosensitive layer on a support, and the structure is produced by deposition of metal. The photosensitive layer is exposed twice, producing a first set of wires (101) during first exposure, and the second set of wires (102) during a second exposure. The same mask can be used for both exposures. For the second exposure the mask is turned through an angle of 90 deg. The first photosensitive layer can be at lest partially developed after the first exposure.</p>
申请公布号 DE2727646(A1) 申请公布日期 1978.12.21
申请号 DE19772727646 申请日期 1977.06.20
申请人 SIEMENS AG 发明人 SCHUSTER-WOLDAN,HANS,DR.;WEINGAND,KASPAR,DR.;TRAUSCH,GUENTHER,DIPL.-ING.;KOCH,DIRK,ING.
分类号 G02B5/18;G03F7/20;H01J37/30;(IPC1-7):H01J37/30 主分类号 G02B5/18
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