| 摘要 |
<p>A high output semiconductor device of the type which is tightly encased in a plastic coating, and includes a wafer-shaped semiconductor body having electrodes at its opposed major surfaces, two cylindrical metal bodies serving as current connecting and heat dissipating members contacting the electrodes of the semiconductor body at the respective major surfaces, and an insulating ring which encloses the metal bodies and the semiconductor body thereby centering the same. A pair of annular sheet metal strips, each having a dished portion adjacent the inner periphery, are each fastened at their inner peripheries to the superficies of a respective one of the two metal bodies. The dished portion of each of the annular strips encloses one frontal face or edge surface of the insulating ring while leaving an air gap therebetween and the outer edge portion of each annular strip extends into and is rigidly embedded in the plastic coating which has been produced by encasing or spraying under pressure around the outer surface of the insulating ring. The insulating ring is made of a material which does not adhere to the metal bodies or the annular strips and has a high softening temperature.</p> |
