| 摘要 |
PURPOSE: To obtain bistable state of a transistor by including a process for cooling an SOI structure, and a process for supplying an electric charge to the cavity of the SOI structure, or for extracting the charge from the cavity. CONSTITUTION: An SOI structure 1 is provided with a back gate 2, insulating layer 3, N<+> silicon film 4 having an SOI cavity, and P<-> area 5. A front insulating layer 6 is provided for an Si layer 4 and the P<-> area 5, and a front gate 7 is provided for the front insulating layer 6. When a voltage is applied in a lateral direction, the current value of the cavity area 5 depends on the voltages of the front gate 7 and the back gate 2. Also, a charge QCAV of the P<-> area can be controlled by different methods such as laser irradiation, impact ionization, or tunneling in the P<-> area 5 or the peripheral area. This charge state of the cavity is held for a certain time when this structure is cooled. Thus, the multiple stage state or bistable stage of a semiconductor structure can be obtained, and a memory effect can be obtained.
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