发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a connection device having a contact terminal capable of coming into contact with an object to be inspected at many points and with high density and provide a manufacturing method thereof SOLUTION: A hole which becomes a mold for forming the contact terminal 103 is formed by anisotropic etching for a silicone wafer, and the contact terminal 103, an insulation film 104 made of polyimide film, and a wiring for pulling out 105 are formed using this mold. A silicone wafer which becomes a buffer layer 108 and a substrate 109 is sandwiched between the insulation film 104 and a wiring substrate 107 to integrate them, and the mold is removed. Then, the wiring for pulling out 105 is connected with an electrode 110a of the wiring substrate 107 by solder 111.
申请公布号 JP2001324516(A) 申请公布日期 2001.11.22
申请号 JP20010091641 申请日期 2001.03.28
申请人 HITACHI LTD 发明人 KASUKABE SUSUMU;USAMI MITSUO;UEHARA KEIJIRO;TASE TAKASHI;ISHINO MASAKAZU;KASHIMURA TAKASHI
分类号 G01R1/073;H01L21/66;(IPC1-7):G01R1/073 主分类号 G01R1/073
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