发明名称 PROJECTION EXPOSURE SYSTEM, EXPOSURE METHOD, MANUFACTURING METHOD FOR SEMICONDUCTOR, AND ADJUSTING METHOD FOR THE PROJECTION OPTICAL SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a high-performance projection exposure system which is durable and superior in reproducibility, while an optical characteristics is rotationally assymetric about the optical axis of a projection optical system which remains in the projection optical system. SOLUTION: A projection exposure device is provided, which comprises an illuminating optical system for illuminating a first object 35 and a projection optical system 36, which projects the image of the first object 35 which is illuminated with the illuminating optical system onto a second object 38 at a prescribed magnification. Between the first and second objects, optical means (1 and 2) having power of rotational assymetry about the optical axis of projection optical system are provided. A plane parallel plate is provided between the first and second objects, which is so worked as to correct rotational assymetry error component and aberration component remaining at random in the projection optical system. The optical means is so provided as to be rotatable about the optical axis of the projection optical system or as to be movable along the optical axis of the projection optical system, for correcting the optical characteristics remaining in the projection optical system which is rotationally assymetic with respect to the optical axis of the projection optical system as the center.
申请公布号 JP2002015995(A) 申请公布日期 2002.01.18
申请号 JP20010164375 申请日期 2001.05.31
申请人 NIKON CORP 发明人 SASAYA TOSHIHIRO;ENDO KAZUMASA;USHIDA KAZUO
分类号 G02B13/24;G03F7/20;G03F7/22;H01L21/027;(IPC1-7):H01L21/027 主分类号 G02B13/24
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