| 摘要 |
<p>A read-only memory which can be programmed by means of internal fuses and whose memory cells are formed by bipolar transistors in an ECL circuit. The emitters of the memory-position transistors are coupled to the emitter in a row-address transistor, the bases are connected directly to the emitter of a column read transistor, the collector lines include the fuses, and the rows and columns are supplied from current sources.</p> |
