发明名称 Channel depletion boundary modulation magnetic field sensor
摘要 A high sensitivity, low noise, broad bandwidth channel conduction field sensor device is described. The conductive channel is configured to create an exceptionally narrow, undepleted conduction channel of approximately filamentary form. The filamentary conductive channel so formed is provided with a source at one end of the channel and two or more laterally spaced drains at the other end thereof. Electric or magnetic fields may be utilized to deflect a stream of charge carriers traversing the conductive channel from the source toward the drains utilizing the depletion width modulation effect of the fields upon the boundaries defining the conductive channel portion. Modulation of the depletion zone width and depth along the channel sides effectively moves the stream of carriers and the conductive channel area to overlap one drain more than another. This develops a differential drain current balance which can be utilized to provide an output signal. Width and length criteria for defining a filamentary channel structure are described for the ultimate desired configuration and size which are to be obtained. As noted, operation of the device is based upon modulation of the width and depth of the depletion zone boundaries defining the conductive channel. An increased signal output is obtained by reducing the width of the channel to eliminate excess carriers normally found in wide channel devices and, further, by making the depletion zones as large a portion of the total channel width as can be obtained.
申请公布号 US4129880(A) 申请公布日期 1978.12.12
申请号 US19770812298 申请日期 1977.07.01
申请人 IBM 发明人 VINAL A
分类号 G01R33/09;G01R29/08;G01R33/06;G11B5/33;H01L29/10;H01L29/76;H01L29/78;H01L29/80;H01L29/82;H01L43/00;H01L43/06;(IPC1-7):H01L27/22;H01L29/96 主分类号 G01R33/09
代理机构 代理人
主权项
地址